FQP13N06L Pricing (USD) [79254pcs Stock]
- 1 pcs$0.44319
- 10 pcs$0.38883
- 100 pcs$0.28369
- 500 pcs$0.21013
- 1,000 pcs$0.16810
- Part Number:
- FQP13N06L
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 60V 13.6A TO-220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Diodes - RF, Power Driver Modules, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in ON Semiconductor FQP13N06L electronic components. FQP13N06L can be shipped within 24 hours after order. If you have any demands for FQP13N06L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQP13N06L Product Attributes
Part Number :
FQP13N06L
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 60V 13.6A TO-220
Series :
QFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
13.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, Vgs :
110 mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6.4nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
45W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220-3
Package / Case :
TO-220-3
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