Infineon Technologies - IRFB52N15DPBF

KEY Part #: K6399065

IRFB52N15DPBF Pricing (USD) [29225pcs Stock]

  • 1 pcs$1.30006
  • 10 pcs$1.17270
  • 100 pcs$0.89407
  • 500 pcs$0.69538
  • 1,000 pcs$0.57618

Part Number:
IRFB52N15DPBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 150V 51A TO-220AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Diodes - Zener - Single, Transistors - IGBTs - Modules, Transistors - IGBTs - Single, Diodes - RF, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFB52N15DPBF Product Attributes

Part Number : IRFB52N15DPBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 150V 51A TO-220AB
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 32 mOhm @ 36A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 89nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2770pF @ 25V
FET Feature : -
Power Dissipation (Max) : 3.8W (Ta), 230W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3

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