FDMS86183 Pricing (USD) [148514pcs Stock]
- 1 pcs$0.28782
- 3,000 pcs$0.28639
- Part Number:
- FDMS86183
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 100V 51A 8PQFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Single, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Modules, Thyristors - SCRs, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDMS86183 electronic components. FDMS86183 can be shipped within 24 hours after order. If you have any demands for FDMS86183, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDMS86183 Product Attributes
Part Number :
FDMS86183
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 100V 51A 8PQFN
Series :
PowerTrench®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
12.8 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id :
4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 6V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1515pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
63W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-PQFN (5x6)
Package / Case :
8-PowerTDFN
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