ZXMN10A11GTA Pricing (USD) [257918pcs Stock]
- 1 pcs$0.14341
- 1,000 pcs$0.12877
- Part Number:
- ZXMN10A11GTA
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 100V 1.7A SOT223.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - Bipolar (BJT) - Single, Diodes - Zener - Arrays, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modules and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in Diodes Incorporated ZXMN10A11GTA electronic components. ZXMN10A11GTA can be shipped within 24 hours after order. If you have any demands for ZXMN10A11GTA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN10A11GTA Product Attributes
Part Number :
ZXMN10A11GTA
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 100V 1.7A SOT223
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
350 mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
5.4nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
274pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
2W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-223
Package / Case :
TO-261-4, TO-261AA
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