IPW60R080P7XKSA1 Pricing (USD) [12758pcs Stock]
- 1 pcs$2.95269
- 10 pcs$2.63759
- 100 pcs$2.16278
- 500 pcs$1.75131
- 1,000 pcs$1.47701
- Part Number:
- IPW60R080P7XKSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 600V 37A TO247-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Thyristors - TRIACs, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Modules, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Special Purpose and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPW60R080P7XKSA1 electronic components. IPW60R080P7XKSA1 can be shipped within 24 hours after order. If you have any demands for IPW60R080P7XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPW60R080P7XKSA1 Product Attributes
Part Number :
IPW60R080P7XKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 600V 37A TO247-3
Series :
CoolMOS™ P7
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
80 mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id :
4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs :
51nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2180pF @ 400V
FET Feature :
-
Power Dissipation (Max) :
129W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO247-3
Package / Case :
TO-247-3
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