SIHB120N60E-GE3 Pricing (USD) [16124pcs Stock]
- 1 pcs$2.55606
- Part Number:
- SIHB120N60E-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CHAN 650V D2PAK TO-263.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Diodes - Rectifiers - Arrays, Thyristors - TRIACs, Transistors - IGBTs - Modules, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIHB120N60E-GE3 electronic components. SIHB120N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB120N60E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHB120N60E-GE3 Product Attributes
Part Number :
SIHB120N60E-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CHAN 650V D2PAK TO-263
Series :
E
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
120 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
45nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1562pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
179W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D²PAK (TO-263)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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