FCP125N60E Pricing (USD) [42335pcs Stock]
- 1 pcs$1.56535
- 800 pcs$1.55757
- Part Number:
- FCP125N60E
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 600V 29A TO220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF, Transistors - JFETs and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in ON Semiconductor FCP125N60E electronic components. FCP125N60E can be shipped within 24 hours after order. If you have any demands for FCP125N60E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCP125N60E Product Attributes
Part Number :
FCP125N60E
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 600V 29A TO220
Series :
SuperFET® II
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
125 mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
95nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2990pF @ 380V
FET Feature :
-
Power Dissipation (Max) :
278W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220-3
Package / Case :
TO-220-3
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