IXFH52N50P2 Pricing (USD) [11404pcs Stock]
- 1 pcs$3.97511
- 10 pcs$3.57760
- 100 pcs$2.94158
- 500 pcs$2.46457
- 1,000 pcs$2.14656
- Part Number:
- IXFH52N50P2
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 500V 52A TO247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - Zener - Single, Transistors - Special Purpose, Transistors - Programmable Unijunction, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in IXYS IXFH52N50P2 electronic components. IXFH52N50P2 can be shipped within 24 hours after order. If you have any demands for IXFH52N50P2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH52N50P2 Product Attributes
Part Number :
IXFH52N50P2
Manufacturer :
IXYS
Description :
MOSFET N-CH 500V 52A TO247
Series :
HiPerFET™, PolarHV™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Current - Continuous Drain (Id) @ 25°C :
52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
120 mOhm @ 26A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
113nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
6800pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
960W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247AD (IXFH)
Package / Case :
TO-247-3
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