DMN3010LFG-13 Pricing (USD) [383534pcs Stock]
- 1 pcs$0.09644
- 3,000 pcs$0.08631
- Part Number:
- DMN3010LFG-13
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 30V POWERDI3333-8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - JFETs, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMN3010LFG-13 electronic components. DMN3010LFG-13 can be shipped within 24 hours after order. If you have any demands for DMN3010LFG-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3010LFG-13 Product Attributes
Part Number :
DMN3010LFG-13
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 30V POWERDI3333-8
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
11A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
8.5 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
37nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2075pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
900mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerDI3333-8
Package / Case :
8-PowerWDFN
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