IXTA3N100D2HV Pricing (USD) [31249pcs Stock]
- 1 pcs$1.31884
- Part Number:
- IXTA3N100D2HV
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Diodes - Bridge Rectifiers, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Transistors - Programmable Unijunction, Transistors - IGBTs - Modules and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in IXYS IXTA3N100D2HV electronic components. IXTA3N100D2HV can be shipped within 24 hours after order. If you have any demands for IXTA3N100D2HV, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA3N100D2HV Product Attributes
Part Number :
IXTA3N100D2HV
Manufacturer :
IXYS
Description :
MOSFET N-CH
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
3A (Tj)
Drive Voltage (Max Rds On, Min Rds On) :
0V
Rds On (Max) @ Id, Vgs :
6 Ohm @ 1.5A, 0V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
37.5nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1020pF @ 25V
FET Feature :
Depletion Mode
Power Dissipation (Max) :
125W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-263HV
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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