SSM6K211FE,LF Pricing (USD) [636850pcs Stock]
- 1 pcs$0.06421
- 4,000 pcs$0.06389
- Part Number:
- SSM6K211FE,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 20V 3.2A ES6.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Special Purpose, Thyristors - TRIACs, Diodes - Zener - Arrays, Diodes - Bridge Rectifiers, Thyristors - SCRs - Modules, Power Driver Modules and Diodes - Rectifiers - Arrays ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage SSM6K211FE,LF electronic components. SSM6K211FE,LF can be shipped within 24 hours after order. If you have any demands for SSM6K211FE,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6K211FE,LF Product Attributes
Part Number :
SSM6K211FE,LF
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 20V 3.2A ES6
Series :
U-MOSIII
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
47 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
10.8nC @ 4.5V
Vgs (Max) :
±10V
Input Capacitance (Ciss) (Max) @ Vds :
510pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
500mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
ES6
Package / Case :
SOT-563, SOT-666
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