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  5. SSR1N60BTM_F080

ON Semiconductor - SSR1N60BTM_F080

KEY Part #: K6407379

[8619pcs Stock]

    Part Number:
    SSR1N60BTM_F080
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET N-CH 600V 0.9A DPAK.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Arrays, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - RF, Transistors - Programmable Unijunction and Transistors - Special Purpose ...
    Competitive Advantage:
    We specialize in ON Semiconductor SSR1N60BTM_F080 electronic components. SSR1N60BTM_F080 can be shipped within 24 hours after order. If you have any demands for SSR1N60BTM_F080, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SSR1N60BTM_F080 Product Attributes

    Part Number : SSR1N60BTM_F080
    Manufacturer : ON Semiconductor
    Description : MOSFET N-CH 600V 0.9A DPAK
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 600V
    Current - Continuous Drain (Id) @ 25°C : 900mA (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 12 Ohm @ 450mA, 10V
    Vgs(th) (Max) @ Id : 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 7.7nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 215pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 2.5W (Ta), 28W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : D-Pak
    Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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