IXYS - IXTH110N25T

KEY Part #: K6398038

IXTH110N25T Pricing (USD) [13651pcs Stock]

  • 1 pcs$3.47272
  • 10 pcs$3.12456
  • 100 pcs$2.56902
  • 500 pcs$2.15241
  • 1,000 pcs$1.87467

Part Number:
IXTH110N25T
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 250V 110A TO-247.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - RF, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Pre-Biased and Diodes - Zener - Single ...
Competitive Advantage:
We specialize in IXYS IXTH110N25T electronic components. IXTH110N25T can be shipped within 24 hours after order. If you have any demands for IXTH110N25T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTH110N25T Product Attributes

Part Number : IXTH110N25T
Manufacturer : IXYS
Description : MOSFET N-CH 250V 110A TO-247
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 250V
Current - Continuous Drain (Id) @ 25°C : 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 24 mOhm @ 55A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 157nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 9400pF @ 25V
FET Feature : -
Power Dissipation (Max) : 694W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247 (IXTH)
Package / Case : TO-247-3

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