NXP USA Inc. - BUK9E3R2-40B,127

KEY Part #: K6415277

[12466pcs Stock]


    Part Number:
    BUK9E3R2-40B,127
    Manufacturer:
    NXP USA Inc.
    Detailed description:
    MOSFET N-CH 40V 100A I2PAK.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - JFETs, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single and Thyristors - TRIACs ...
    Competitive Advantage:
    We specialize in NXP USA Inc. BUK9E3R2-40B,127 electronic components. BUK9E3R2-40B,127 can be shipped within 24 hours after order. If you have any demands for BUK9E3R2-40B,127, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BUK9E3R2-40B,127 Product Attributes

    Part Number : BUK9E3R2-40B,127
    Manufacturer : NXP USA Inc.
    Description : MOSFET N-CH 40V 100A I2PAK
    Series : TrenchMOS™
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 40V
    Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 2.8 mOhm @ 25A, 10V
    Vgs(th) (Max) @ Id : 2V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs : 94nC @ 5V
    Vgs (Max) : ±15V
    Input Capacitance (Ciss) (Max) @ Vds : 10502pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 300W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : I2PAK
    Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA

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