Toshiba Semiconductor and Storage - TK7P60W,RVQ

KEY Part #: K6419360

TK7P60W,RVQ Pricing (USD) [107052pcs Stock]

  • 1 pcs$0.38937
  • 2,000 pcs$0.38743

Part Number:
TK7P60W,RVQ
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N CH 600V 7A DPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Diodes - Rectifiers - Arrays, Transistors - JFETs, Thyristors - SCRs, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - DIACs, SIDACs, Diodes - Zener - Arrays and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK7P60W,RVQ electronic components. TK7P60W,RVQ can be shipped within 24 hours after order. If you have any demands for TK7P60W,RVQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK7P60W,RVQ Product Attributes

Part Number : TK7P60W,RVQ
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N CH 600V 7A DPAK
Series : DTMOSIV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 600 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id : 3.7V @ 350µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 490pF @ 300V
FET Feature : Super Junction
Power Dissipation (Max) : 60W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DPAK
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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