FDMS86200DC Pricing (USD) [53717pcs Stock]
- 1 pcs$0.73154
- 3,000 pcs$0.72790
- Part Number:
- FDMS86200DC
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 150V 9.3A POWER 56.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - IGBTs - Modules, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDMS86200DC electronic components. FDMS86200DC can be shipped within 24 hours after order. If you have any demands for FDMS86200DC, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDMS86200DC Product Attributes
Part Number :
FDMS86200DC
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 150V 9.3A POWER 56
Series :
Dual Cool™, PowerTrench®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
150V
Current - Continuous Drain (Id) @ 25°C :
9.3A (Ta), 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
17 mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2955pF @ 75V
FET Feature :
-
Power Dissipation (Max) :
3.2W (Ta), 125W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
Dual Cool™56
Package / Case :
8-PowerTDFN
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