Infineon Technologies - IPD50N06S409ATMA2

KEY Part #: K6420264

IPD50N06S409ATMA2 Pricing (USD) [176229pcs Stock]

  • 1 pcs$0.20988
  • 2,500 pcs$0.17627

Part Number:
IPD50N06S409ATMA2
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 60V 50A TO252-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF, Transistors - Bipolar (BJT) - Single, Transistors - Programmable Unijunction, Diodes - Bridge Rectifiers and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
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IPD50N06S409ATMA2 Product Attributes

Part Number : IPD50N06S409ATMA2
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 60V 50A TO252-3
Series : Automotive, AEC-Q101, OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 9 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 4V @ 34µA
Gate Charge (Qg) (Max) @ Vgs : 47.1nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3785pF @ 25V
FET Feature : -
Power Dissipation (Max) : 71W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-TO252-3-11
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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