[2460pcs Stock]
- Part Number:
- IRF6892STR1PBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 25V 28A S3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - Programmable Unijunction, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Diodes - Bridge Rectifiers, Diodes - Rectifiers - Single, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF6892STR1PBF electronic components. IRF6892STR1PBF can be shipped within 24 hours after order. If you have any demands for IRF6892STR1PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6892STR1PBF Product Attributes
Part Number :
IRF6892STR1PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 25V 28A S3
Series :
HEXFET®
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
25V
Current - Continuous Drain (Id) @ 25°C :
28A (Ta), 125A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.7 mOhm @ 28A, 10V
Vgs(th) (Max) @ Id :
2.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 4.5V
Vgs (Max) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
2510pF @ 13V
FET Feature :
-
Power Dissipation (Max) :
2.1W (Ta), 42W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DIRECTFET™ S3C
Package / Case :
DirectFET™ Isometric S3C
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