Microchip Technology - DN2530N8-G

KEY Part #: K6402039

DN2530N8-G Pricing (USD) [180152pcs Stock]

  • 1 pcs$0.21035
  • 2,000 pcs$0.20930

Part Number:
DN2530N8-G
Manufacturer:
Microchip Technology
Detailed description:
MOSFET N-CH 300V 0.2A SOT89-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Arrays, Diodes - RF, Transistors - Programmable Unijunction and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Microchip Technology DN2530N8-G electronic components. DN2530N8-G can be shipped within 24 hours after order. If you have any demands for DN2530N8-G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DN2530N8-G Product Attributes

Part Number : DN2530N8-G
Manufacturer : Microchip Technology
Description : MOSFET N-CH 300V 0.2A SOT89-3
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 300V
Current - Continuous Drain (Id) @ 25°C : 200mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 0V
Rds On (Max) @ Id, Vgs : 12 Ohm @ 150mA, 0V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 25V
FET Feature : Depletion Mode
Power Dissipation (Max) : 1.6W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-243AA (SOT-89)
Package / Case : TO-243AA
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