Diodes Incorporated - DMG4800LK3-13

KEY Part #: K6403480

DMG4800LK3-13 Pricing (USD) [392747pcs Stock]

  • 1 pcs$0.09418
  • 2,500 pcs$0.08429

Part Number:
DMG4800LK3-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CH 30V 10A TO252.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Thyristors - SCRs, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Diodes - Zener - Single, Power Driver Modules, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in Diodes Incorporated DMG4800LK3-13 electronic components. DMG4800LK3-13 can be shipped within 24 hours after order. If you have any demands for DMG4800LK3-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMG4800LK3-13 Product Attributes

Part Number : DMG4800LK3-13
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH 30V 10A TO252
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 17 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8.7nC @ 5V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 798pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.71W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252-3
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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