STI150N10F7 Pricing (USD) [27833pcs Stock]
- 1 pcs$1.48075
- 1,000 pcs$0.62219
- Part Number:
- STI150N10F7
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 100V 110A I2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs - Modules, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - RF, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in STMicroelectronics STI150N10F7 electronic components. STI150N10F7 can be shipped within 24 hours after order. If you have any demands for STI150N10F7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STI150N10F7 Product Attributes
Part Number :
STI150N10F7
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 100V 110A I2PAK
Series :
STripFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.2 mOhm @ 55A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
117nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
8115pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
250W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I2PAK (TO-262)
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
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