Infineon Technologies - IRLR3105TRPBF

KEY Part #: K6401993

IRLR3105TRPBF Pricing (USD) [219394pcs Stock]

  • 1 pcs$0.16859
  • 2,000 pcs$0.16183

Part Number:
IRLR3105TRPBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 55V 25A DPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Single, Transistors - JFETs and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in Infineon Technologies IRLR3105TRPBF electronic components. IRLR3105TRPBF can be shipped within 24 hours after order. If you have any demands for IRLR3105TRPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRLR3105TRPBF Product Attributes

Part Number : IRLR3105TRPBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 55V 25A DPAK
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 37 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 5V
Vgs (Max) : ±16V
Input Capacitance (Ciss) (Max) @ Vds : 710pF @ 25V
FET Feature : -
Power Dissipation (Max) : 57W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D-Pak
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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