Vishay Semiconductor Diodes Division - RGP30B-E3/54

KEY Part #: K6440284

RGP30B-E3/54 Pricing (USD) [322487pcs Stock]

  • 1 pcs$0.12103
  • 2,800 pcs$0.12043

Part Number:
RGP30B-E3/54
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 3A DO201AD. Rectifiers 100 Volt 3.0A 150ns 125 Amp IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs and Power Driver Modules ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division RGP30B-E3/54 electronic components. RGP30B-E3/54 can be shipped within 24 hours after order. If you have any demands for RGP30B-E3/54, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGP30B-E3/54 Product Attributes

Part Number : RGP30B-E3/54
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 3A DO201AD
Series : SUPERECTIFIER®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 3A
Voltage - Forward (Vf) (Max) @ If : 1.3V @ 3A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 150ns
Current - Reverse Leakage @ Vr : 5µA @ 100V
Capacitance @ Vr, F : -
Mounting Type : Through Hole
Package / Case : DO-201AD, Axial
Supplier Device Package : DO-201AD
Operating Temperature - Junction : -65°C ~ 175°C

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