Infineon Technologies - IDB30E120ATMA1

KEY Part #: K6440273

IDB30E120ATMA1 Pricing (USD) [69605pcs Stock]

  • 1 pcs$0.56175
  • 1,000 pcs$0.40580
  • 2,000 pcs$0.37782
  • 5,000 pcs$0.37315

Part Number:
IDB30E120ATMA1
Manufacturer:
Infineon Technologies
Detailed description:
DIODE GEN PURP 1.2KV 50A TO263-3. Diodes - General Purpose, Power, Switching FAST SWITCH EMCON DIODE 1200V 30A
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - JFETs ...
Competitive Advantage:
We specialize in Infineon Technologies IDB30E120ATMA1 electronic components. IDB30E120ATMA1 can be shipped within 24 hours after order. If you have any demands for IDB30E120ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IDB30E120ATMA1 Product Attributes

Part Number : IDB30E120ATMA1
Manufacturer : Infineon Technologies
Description : DIODE GEN PURP 1.2KV 50A TO263-3
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 50A (DC)
Voltage - Forward (Vf) (Max) @ If : 2.15V @ 30A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 243ns
Current - Reverse Leakage @ Vr : 100µA @ 1200V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package : PG-TO263-3
Operating Temperature - Junction : -55°C ~ 150°C

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