Infineon Technologies - IDB30E60ATMA1

KEY Part #: K6440285

IDB30E60ATMA1 Pricing (USD) [68077pcs Stock]

  • 1 pcs$0.57436
  • 1,000 pcs$0.39206

Part Number:
IDB30E60ATMA1
Manufacturer:
Infineon Technologies
Detailed description:
DIODE GEN PURP 600V 52.3A TO263.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Thyristors - SCRs - Modules, Diodes - Zener - Single, Power Driver Modules, Thyristors - SCRs, Thyristors - TRIACs and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in Infineon Technologies IDB30E60ATMA1 electronic components. IDB30E60ATMA1 can be shipped within 24 hours after order. If you have any demands for IDB30E60ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IDB30E60ATMA1 Product Attributes

Part Number : IDB30E60ATMA1
Manufacturer : Infineon Technologies
Description : DIODE GEN PURP 600V 52.3A TO263
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 52.3A (DC)
Voltage - Forward (Vf) (Max) @ If : 2V @ 30A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 126ns
Current - Reverse Leakage @ Vr : 50µA @ 600V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package : PG-TO263-3-2
Operating Temperature - Junction : -40°C ~ 175°C

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