EPC - EPC2001C

KEY Part #: K6417096

EPC2001C Pricing (USD) [41490pcs Stock]

  • 1 pcs$0.98973
  • 2,500 pcs$0.98481

Part Number:
EPC2001C
Manufacturer:
EPC
Detailed description:
GANFET TRANS 100V 36A BUMPED DIE.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Modules, Diodes - Zener - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Diodes - Bridge Rectifiers, Transistors - Special Purpose and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in EPC EPC2001C electronic components. EPC2001C can be shipped within 24 hours after order. If you have any demands for EPC2001C, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EPC2001C Product Attributes

Part Number : EPC2001C
Manufacturer : EPC
Description : GANFET TRANS 100V 36A BUMPED DIE
Series : eGaN®
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 36A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 7 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 9nC @ 5V
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 50V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Die Outline (11-Solder Bar)
Package / Case : Die
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