RW1C020UNT2R Pricing (USD) [484942pcs Stock]
- 1 pcs$0.08432
- 8,000 pcs$0.08390
- Part Number:
- RW1C020UNT2R
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- MOSFET N-CH 20V 2A WEMT6.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs - Modules, Transistors - JFETs, Transistors - IGBTs - Modules and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor RW1C020UNT2R electronic components. RW1C020UNT2R can be shipped within 24 hours after order. If you have any demands for RW1C020UNT2R, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RW1C020UNT2R Product Attributes
Part Number :
RW1C020UNT2R
Manufacturer :
Rohm Semiconductor
Description :
MOSFET N-CH 20V 2A WEMT6
Series :
-
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
105 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
2nC @ 4.5V
Vgs (Max) :
±10V
Input Capacitance (Ciss) (Max) @ Vds :
180pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
400mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
6-WEMT
Package / Case :
SOT-563, SOT-666
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