IRF40H210 Pricing (USD) [105172pcs Stock]
- 1 pcs$0.37178
- 4,000 pcs$0.33759
- Part Number:
- IRF40H210
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 40V 100A PQFN5X6.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Arrays, Thyristors - SCRs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single, Thyristors - TRIACs and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF40H210 electronic components. IRF40H210 can be shipped within 24 hours after order. If you have any demands for IRF40H210, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF40H210 Product Attributes
Part Number :
IRF40H210
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 40V 100A PQFN5X6
Series :
HEXFET®, StrongIRFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
1.7 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id :
3.7V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
152nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5406pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
125W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-PQFN (5x6)
Package / Case :
8-PowerVDFN
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