IXYS - IXFN36N110P

KEY Part #: K6400310

IXFN36N110P Pricing (USD) [1932pcs Stock]

  • 1 pcs$23.64680
  • 10 pcs$23.52915

Part Number:
IXFN36N110P
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 1100V 36A SOT-227B.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Thyristors - TRIACs, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in IXYS IXFN36N110P electronic components. IXFN36N110P can be shipped within 24 hours after order. If you have any demands for IXFN36N110P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFN36N110P Product Attributes

Part Number : IXFN36N110P
Manufacturer : IXYS
Description : MOSFET N-CH 1100V 36A SOT-227B
Series : Polar™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1100V
Current - Continuous Drain (Id) @ 25°C : 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 240 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id : 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 350nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 23000pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1000W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Supplier Device Package : SOT-227B
Package / Case : SOT-227-4, miniBLOC