IRF7410GTRPBF Pricing (USD) [231344pcs Stock]
- 1 pcs$0.15988
- 4,000 pcs$0.15064
- Part Number:
- IRF7410GTRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET P-CH 12V 16A 8-SOIC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Thyristors - TRIACs, Thyristors - SCRs, Transistors - JFETs and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF7410GTRPBF electronic components. IRF7410GTRPBF can be shipped within 24 hours after order. If you have any demands for IRF7410GTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7410GTRPBF Product Attributes
Part Number :
IRF7410GTRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET P-CH 12V 16A 8-SOIC
Series :
HEXFET®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
12V
Current - Continuous Drain (Id) @ 25°C :
16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
7 mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id :
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
91nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
8676pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
2.5W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SO
Package / Case :
8-SOIC (0.154", 3.90mm Width)
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