IRLR8259TRPBF Pricing (USD) [216233pcs Stock]
- 1 pcs$0.17105
- 2,000 pcs$0.15140
- Part Number:
- IRLR8259TRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 25V 57A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Power Driver Modules, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRLR8259TRPBF electronic components. IRLR8259TRPBF can be shipped within 24 hours after order. If you have any demands for IRLR8259TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLR8259TRPBF Product Attributes
Part Number :
IRLR8259TRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 25V 57A DPAK
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
25V
Current - Continuous Drain (Id) @ 25°C :
57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
8.7 mOhm @ 21A, 10V
Vgs(th) (Max) @ Id :
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
900pF @ 13V
FET Feature :
-
Power Dissipation (Max) :
48W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D-Pak
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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