TK8S06K3L(T6L1,NQ) Pricing (USD) [202426pcs Stock]
- 1 pcs$0.20200
- 2,000 pcs$0.20099
- Part Number:
- TK8S06K3L(T6L1,NQ)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 60V 8A DPAK-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Special Purpose, Transistors - JFETs, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK8S06K3L(T6L1,NQ) electronic components. TK8S06K3L(T6L1,NQ) can be shipped within 24 hours after order. If you have any demands for TK8S06K3L(T6L1,NQ), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK8S06K3L(T6L1,NQ) Product Attributes
Part Number :
TK8S06K3L(T6L1,NQ)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 60V 8A DPAK-3
Series :
U-MOSIV
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
54 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id :
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
400pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
25W (Tc)
Operating Temperature :
175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DPAK+
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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