Vishay Semiconductor Diodes Division - EGP31C-E3/C

KEY Part #: K6440302

EGP31C-E3/C Pricing (USD) [247410pcs Stock]

  • 1 pcs$0.14950

Part Number:
EGP31C-E3/C
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 150V 3A DO201AD. Rectifiers 3A,150V,50NS
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose, Thyristors - DIACs, SIDACs, Power Driver Modules, Diodes - Zener - Arrays and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division EGP31C-E3/C electronic components. EGP31C-E3/C can be shipped within 24 hours after order. If you have any demands for EGP31C-E3/C, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EGP31C-E3/C Product Attributes

Part Number : EGP31C-E3/C
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 150V 3A DO201AD
Series : SUPERECTIFIER®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 150V
Current - Average Rectified (Io) : 3A
Voltage - Forward (Vf) (Max) @ If : 950mV @ 3A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Current - Reverse Leakage @ Vr : 1µA @ 150V
Capacitance @ Vr, F : 117pF @ 4V, 1MHz
Mounting Type : Through Hole
Package / Case : DO-201AD, Axial
Supplier Device Package : DO-201AD
Operating Temperature - Junction : -65°C ~ 175°C

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