IXTA08N100D2HV Pricing (USD) [41564pcs Stock]
- 1 pcs$0.94072
- Part Number:
- IXTA08N100D2HV
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Modules, Thyristors - SCRs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in IXYS IXTA08N100D2HV electronic components. IXTA08N100D2HV can be shipped within 24 hours after order. If you have any demands for IXTA08N100D2HV, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA08N100D2HV Product Attributes
Part Number :
IXTA08N100D2HV
Manufacturer :
IXYS
Description :
MOSFET N-CH
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
800mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) :
0V
Rds On (Max) @ Id, Vgs :
21 Ohm @ 400mA, 0V
Vgs(th) (Max) @ Id :
4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
14.6nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
325pF @ 25V
FET Feature :
Depletion Mode
Power Dissipation (Max) :
60W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-263HV
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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