FCP850N80Z Pricing (USD) [71431pcs Stock]
- 1 pcs$0.73000
- 800 pcs$0.72637
- Part Number:
- FCP850N80Z
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 800V 8A.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - DIACs, SIDACs and Power Driver Modules ...
- Competitive Advantage:
- We specialize in ON Semiconductor FCP850N80Z electronic components. FCP850N80Z can be shipped within 24 hours after order. If you have any demands for FCP850N80Z, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCP850N80Z Product Attributes
Part Number :
FCP850N80Z
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 800V 8A
Series :
SuperFET® II
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
850 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1315pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
136W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220-3
Package / Case :
TO-220-3
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