Infineon Technologies - IDP20E65D2XKSA1

KEY Part #: K6440299

IDP20E65D2XKSA1 Pricing (USD) [82999pcs Stock]

  • 1 pcs$0.47110
  • 500 pcs$0.32752

Part Number:
IDP20E65D2XKSA1
Manufacturer:
Infineon Technologies
Detailed description:
DIODE GEN PURP 650V 40A TO220-2. Diodes - General Purpose, Power, Switching IGBT PRODUCTS
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Special Purpose, Thyristors - TRIACs, Diodes - RF, Diodes - Zener - Single, Diodes - Rectifiers - Single and Transistors - Programmable Unijunction ...
Competitive Advantage:
We specialize in Infineon Technologies IDP20E65D2XKSA1 electronic components. IDP20E65D2XKSA1 can be shipped within 24 hours after order. If you have any demands for IDP20E65D2XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IDP20E65D2XKSA1 Product Attributes

Part Number : IDP20E65D2XKSA1
Manufacturer : Infineon Technologies
Description : DIODE GEN PURP 650V 40A TO220-2
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 40A (DC)
Voltage - Forward (Vf) (Max) @ If : 2.2V @ 20A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 32ns
Current - Reverse Leakage @ Vr : 40µA @ 650V
Capacitance @ Vr, F : -
Mounting Type : Through Hole
Package / Case : TO-220-2
Supplier Device Package : PG-TO220-2-1
Operating Temperature - Junction : -40°C ~ 175°C

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