FDN306P Pricing (USD) [581673pcs Stock]
- 1 pcs$0.06391
- 3,000 pcs$0.06359
- Part Number:
- FDN306P
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET P-CH 12V 2.6A SSOT3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Arrays and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDN306P electronic components. FDN306P can be shipped within 24 hours after order. If you have any demands for FDN306P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDN306P Product Attributes
Part Number :
FDN306P
Manufacturer :
ON Semiconductor
Description :
MOSFET P-CH 12V 2.6A SSOT3
Series :
PowerTrench®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
12V
Current - Continuous Drain (Id) @ 25°C :
2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
40 mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
1138pF @ 6V
FET Feature :
-
Power Dissipation (Max) :
500mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SuperSOT-3
Package / Case :
TO-236-3, SC-59, SOT-23-3
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