[13117pcs Stock]
- Part Number:
- IRF5802TR
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 150V 0.9A 6-TSOP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Arrays and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF5802TR electronic components. IRF5802TR can be shipped within 24 hours after order. If you have any demands for IRF5802TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF5802TR Product Attributes
Part Number :
IRF5802TR
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 150V 0.9A 6-TSOP
Series :
HEXFET®
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
150V
Current - Continuous Drain (Id) @ 25°C :
900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.2 Ohm @ 540mA, 10V
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6.8nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
88pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
2W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
Micro6™(TSOP-6)
Package / Case :
SOT-23-6 Thin, TSOT-23-6
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