IRF3610STRLPBF Pricing (USD) [56679pcs Stock]
- 1 pcs$0.70108
- 800 pcs$0.69759
- Part Number:
- IRF3610STRLPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 100V 103A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF3610STRLPBF electronic components. IRF3610STRLPBF can be shipped within 24 hours after order. If you have any demands for IRF3610STRLPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF3610STRLPBF Product Attributes
Part Number :
IRF3610STRLPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 100V 103A D2PAK
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
103A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
11.6 mOhm @ 62A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
5380pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
-
Operating Temperature :
-
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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