Description :
MOSFET N-CH 200V 580A MODULE
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
580A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.8 mOhm @ 430A, 10V
Vgs(th) (Max) @ Id :
4V @ 50mA
Gate Charge (Qg) (Max) @ Vgs :
2750nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
-
Power Dissipation (Max) :
-
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Chassis Mount
Supplier Device Package :
Y3-Li