DMT3009LFVWQ-13 Pricing (USD) [270511pcs Stock]
- 1 pcs$0.13673
- Part Number:
- DMT3009LFVWQ-13
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET BVDSS 25V-30V POWERDI333.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - Programmable Unijunction, Diodes - Bridge Rectifiers, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - RF, Diodes - Zener - Single and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMT3009LFVWQ-13 electronic components. DMT3009LFVWQ-13 can be shipped within 24 hours after order. If you have any demands for DMT3009LFVWQ-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT3009LFVWQ-13 Product Attributes
Part Number :
DMT3009LFVWQ-13
Manufacturer :
Diodes Incorporated
Description :
MOSFET BVDSS 25V-30V POWERDI333
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
12A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
3.8V, 10V
Rds On (Max) @ Id, Vgs :
11 mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
823pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
2.3W (Ta), 35.7W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerDI3333-8
Package / Case :
8-PowerVDFN
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