Infineon Technologies - BTS247ZE3062AATMA2

KEY Part #: K6417912

BTS247ZE3062AATMA2 Pricing (USD) [45925pcs Stock]

  • 1 pcs$0.85139
  • 1,000 pcs$0.69538

Part Number:
BTS247ZE3062AATMA2
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 55V 33A TO220-5.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Diodes - Bridge Rectifiers, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays and Transistors - JFETs ...
Competitive Advantage:
We specialize in Infineon Technologies BTS247ZE3062AATMA2 electronic components. BTS247ZE3062AATMA2 can be shipped within 24 hours after order. If you have any demands for BTS247ZE3062AATMA2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BTS247ZE3062AATMA2 Product Attributes

Part Number : BTS247ZE3062AATMA2
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 55V 33A TO220-5
Series : TEMPFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 18 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs : 90nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1730pF @ 25V
FET Feature : Temperature Sensing Diode
Power Dissipation (Max) : 120W (Tc)
Operating Temperature : -40°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-TO263-5-2
Package / Case : TO-263-5, D²Pak (4 Leads + Tab), TO-263BB

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