PMZ200UNEYL Pricing (USD) [1154584pcs Stock]
- 1 pcs$0.03204
- 10,000 pcs$0.02805
- Part Number:
- PMZ200UNEYL
- Manufacturer:
- Nexperia USA Inc.
- Detailed description:
- MOSFET N-CH 30V SOT883. ESD Suppressors / TVS Diodes 30V N-Channel Trench MOSFET
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Thyristors - TRIACs, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Arrays and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in Nexperia USA Inc. PMZ200UNEYL electronic components. PMZ200UNEYL can be shipped within 24 hours after order. If you have any demands for PMZ200UNEYL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMZ200UNEYL Product Attributes
Part Number :
PMZ200UNEYL
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET N-CH 30V SOT883
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
250 mOhm @ 1.4A, 4.5V
Vgs(th) (Max) @ Id :
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
2.7nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
89pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
350mW (Ta), 6.25W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DFN1006-3
Package / Case :
SC-101, SOT-883
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