IAUS165N08S5N029ATMA1 Pricing (USD) [42793pcs Stock]
- 1 pcs$0.91372
- Part Number:
- IAUS165N08S5N029ATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 80V 660A PG-HSOG-8-1.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Power Driver Modules, Thyristors - TRIACs, Diodes - Zener - Single, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Special Purpose and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Infineon Technologies IAUS165N08S5N029ATMA1 electronic components. IAUS165N08S5N029ATMA1 can be shipped within 24 hours after order. If you have any demands for IAUS165N08S5N029ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IAUS165N08S5N029ATMA1 Product Attributes
Part Number :
IAUS165N08S5N029ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 80V 660A PG-HSOG-8-1
Series :
Automotive, AEC-Q101, OptiMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Current - Continuous Drain (Id) @ 25°C :
165A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
2.9 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id :
3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs :
90nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6370pF @ 40V
FET Feature :
-
Power Dissipation (Max) :
167W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-HSOG-8-1
Package / Case :
8-PowerSMD, Gull Wing
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