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  5. FDMT80080DC

ON Semiconductor - FDMT80080DC

KEY Part #: K6396054

FDMT80080DC Pricing (USD) [34311pcs Stock]

  • 1 pcs$1.20716
  • 3,000 pcs$1.20116
Part Number:
FDMT80080DC
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 80V.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge Rectifiers, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in ON Semiconductor FDMT80080DC electronic components. FDMT80080DC can be shipped within 24 hours after order. If you have any demands for FDMT80080DC, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMT80080DC Product Attributes

Part Number : FDMT80080DC
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 80V
Series : Dual Cool™, PowerTrench®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 36A (Ta), 254A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V, 10V
Rds On (Max) @ Id, Vgs : 1.35 mOhm @ 36A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 273nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 20720pF @ 40V
FET Feature : -
Power Dissipation (Max) : 3.2W (Ta), 156W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-Dual Cool™88
Package / Case : 8-PowerVDFN

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