FDFMA2N028Z Pricing (USD) [315918pcs Stock]
- 1 pcs$0.11767
- 3,000 pcs$0.11708
- Part Number:
- FDFMA2N028Z
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 20V 3.7A MLP2X2.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Arrays, Transistors - Special Purpose and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDFMA2N028Z electronic components. FDFMA2N028Z can be shipped within 24 hours after order. If you have any demands for FDFMA2N028Z, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDFMA2N028Z Product Attributes
Part Number :
FDFMA2N028Z
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 20V 3.7A MLP2X2
Series :
PowerTrench®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
68 mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6nC @ 4.5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
455pF @ 10V
FET Feature :
Schottky Diode (Isolated)
Power Dissipation (Max) :
1.4W (Tj)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
6-MicroFET (2x2)
Package / Case :
6-VDFN Exposed Pad
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