Toshiba Semiconductor and Storage - TK50E08K3,S1X(S

KEY Part #: K6405628

[1600pcs Stock]


    Part Number:
    TK50E08K3,S1X(S
    Manufacturer:
    Toshiba Semiconductor and Storage
    Detailed description:
    MOSFET N-CH 75V 50A TO-220AB.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Diodes - RF, Transistors - Special Purpose and Transistors - Bipolar (BJT) - Single ...
    Competitive Advantage:
    We specialize in Toshiba Semiconductor and Storage TK50E08K3,S1X(S electronic components. TK50E08K3,S1X(S can be shipped within 24 hours after order. If you have any demands for TK50E08K3,S1X(S, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    TK50E08K3,S1X(S Product Attributes

    Part Number : TK50E08K3,S1X(S
    Manufacturer : Toshiba Semiconductor and Storage
    Description : MOSFET N-CH 75V 50A TO-220AB
    Series : -
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 75V
    Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : -
    Rds On (Max) @ Id, Vgs : 12 mOhm @ 25A, 10V
    Vgs(th) (Max) @ Id : -
    Gate Charge (Qg) (Max) @ Vgs : 55nC @ 10V
    Vgs (Max) : -
    Input Capacitance (Ciss) (Max) @ Vds : -
    FET Feature : -
    Power Dissipation (Max) : -
    Operating Temperature : -
    Mounting Type : Through Hole
    Supplier Device Package : TO-220-3
    Package / Case : TO-220-3

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