IRFH5250DTRPBF Pricing (USD) [119955pcs Stock]
- 1 pcs$0.30834
- 4,000 pcs$0.29601
- Part Number:
- IRFH5250DTRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 25V 40A 8VQFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Diodes - RF, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Arrays, Diodes - Rectifiers - Single and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFH5250DTRPBF electronic components. IRFH5250DTRPBF can be shipped within 24 hours after order. If you have any demands for IRFH5250DTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH5250DTRPBF Product Attributes
Part Number :
IRFH5250DTRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 25V 40A 8VQFN
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
25V
Current - Continuous Drain (Id) @ 25°C :
40A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.4 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id :
2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
83nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6115pF @ 13V
FET Feature :
-
Power Dissipation (Max) :
3.6W (Ta), 156W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-PQFN (5x6)
Package / Case :
8-PowerVDFN
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