2N7002ET7G Pricing (USD) [3428205pcs Stock]
- 1 pcs$0.01079
- Part Number:
- 2N7002ET7G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- NFET SOT23 60V 115MA 7MO.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - IGBTs - Modules, Diodes - RF, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor 2N7002ET7G electronic components. 2N7002ET7G can be shipped within 24 hours after order. If you have any demands for 2N7002ET7G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2N7002ET7G Product Attributes
Part Number :
2N7002ET7G
Manufacturer :
ON Semiconductor
Description :
NFET SOT23 60V 115MA 7MO
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2.5 Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
0.81nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
40pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
300mW (Tj)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-23-3 (TO-236)
Package / Case :
TO-236-3, SC-59, SOT-23-3
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