Diodes Incorporated - DMP45H150DHE-13

KEY Part #: K6395092

DMP45H150DHE-13 Pricing (USD) [467093pcs Stock]

  • 1 pcs$0.07919

Part Number:
DMP45H150DHE-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFETP-CHAN 450VSOT223.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modules, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Power Driver Modules and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Diodes Incorporated DMP45H150DHE-13 electronic components. DMP45H150DHE-13 can be shipped within 24 hours after order. If you have any demands for DMP45H150DHE-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMP45H150DHE-13 Product Attributes

Part Number : DMP45H150DHE-13
Manufacturer : Diodes Incorporated
Description : MOSFETP-CHAN 450VSOT223
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 450V
Current - Continuous Drain (Id) @ 25°C : 250mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 150 Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 1.8nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 59.2pF @ 25V
FET Feature : -
Power Dissipation (Max) : 13.9W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-223
Package / Case : TO-261-4, TO-261AA